datasheet of 24C512(EEPROM) have this information about write operation:
BYTE WRITE: A write operation requires two 8-bit data
word addresses following the device address word and
acknowledgment. Upon receipt of this address, the
EEPROM will again respond with a zero and then clock in
the first 8-bit data word. Following receipt of the 8-bit data
word, the EEPROM will output a zero. The addressing
device, such as a microcontroller, then must terminate the
write sequence with a stop condition. At this time the
EEPROM enters an internally-timed write cycle, tWR, to the
nonvolatile memory. All inputs are disabled during this write
cycle and the EEPROM will not respond until the write is
internally-timed write cycle, tWR=10ms(max) is also mentioned in that datasheet.
That means after write one byte in a particular address I have to give 10ms delay, then write another address and so on...
But if i need to write 20K Byte data then it will take a long time.
If it is then how can I reduce the write operation time???